AlAs (Aluminium arsenide)

Semiconductors and photonic platforms

3 datasets, together covering 0.2214–2.48 µm. Default: Fern and Onton 1971: n 0.56–2.2 µm.

Compare datasets

Tick datasets in the list to add them to the plot (up to 12).

Datasets

Experimental data

Models and simulations

Rakić and Majewski 1996: n,k 0.221–2.48 µm n,k 0.2214–2.48 µm

Use it in Lightsmith

Load this data in Python, simulate in one more line

pip install lightsmith

import lightsmith as ls

# AlAs (Aluminium arsenide): Fern and Onton 1971: n 0.56–2.2 µm
alas = ls.fetch_refractiveindex("main", "AlAs", "Fern", ref="c5c2f188e848453def5970e347399d653df2ffc2")
print(alas.range_nm)  # (560, 2200) nm
eps = alas.eps([633])  # complex permittivity

Downloads the original record once (pinned to the imported snapshot) and caches it.

import json, urllib.request
import lightsmith as ls

url = "https://materials.lightsmith.dev/v1/datasets/ds_9ff32a84a6d7/lightsmith"
alas = ls.Tabulated.model_validate(json.load(urllib.request.urlopen(url)))
print(alas.source)  # citation and provenance travel with the data

Any dataset here, as the library's Tabulated material (alas/fern-onton-1971).

# ... load alas as above, then:
sim = ls.Simulation(
    particles=[ls.Particle(shape=ls.Sphere(radius_nm=50), material=alas)],
    medium_index=1.0,
    wavelengths=ls.WavelengthRange(start_nm=560, stop_nm=1000, num=81),
)
res = ls.solve(sim)  # exact Mie for a sphere
print(res.q_ext)     # extinction efficiency at each wavelength

Same spec runs with DDA, FDTD, BEM or T-matrix: ls.compare(sim, ["mie", "dda"]).

import json, urllib.request
import lightsmith as ls

url = "https://materials.lightsmith.dev/v1/datasets/ds_9ff32a84a6d7/lightsmith?model=drude_lorentz"
alas_dl = ls.DrudeLorentz.model_validate(json.load(urllib.request.urlopen(url)))

A dispersive Drude–Lorentz model for time-domain solvers.

Materials guide Open a sphere of it in Studio Quick start Ask the community

Lightsmith is open source (MIT): Mie, T-matrix, BEM, DDA, FDTD, RCWA, TMM, mode solvers and inverse design behind one spec, on CPU or GPU. GitHub.

About AlAs (Aluminium arsenide)

AlAs, or aluminum arsenide, is a III-V semiconductor compound that forms in a zincblende crystal structure. It is often used in conjunction with other III-V semiconductors like GaAs (gallium arsenide) to form heterostructures and quantum wells, which are essential components in modern optoelectronic devices. AlAs has a direct bandgap of approximately 2.16 eV at room temperature, making it transparent to visible light but absorbent in the ultraviolet range. One of its key attributes is its nearly lattice-matched compatibility with GaAs, allowing for high-quality epitaxial growth of multilayer structures. Such layered systems are critical in applications like high-electron-mobility transistors (HEMTs), quantum cascade lasers, and photodetectors. AlAs is also notable for its high thermal conductivity and good electron mobility, which makes it valuable in electronic applications that require effective heat dissipation. However, due to its composition including arsenic, AlAs must be handled with appropriate safety measures. Overall, AlAs remains a material of substantial scientific and technological interest, particularly for its role in enabling high-performance optoelectronic devices.

Other names: Aluminium arsenide, AlGaAs

Aluminium arsenide - Wikipedia

API: /v1/materials/mat_fb5092f62ae6 · slug alas