GaP (Gallium phosphide)

Semiconductors and photonic platforms

6 datasets, together covering 0.2066–366 µm. Default: Aspnes and Studna 1983: n,k 0.21–0.83 µm.

Compare datasets

Tick datasets in the list to add them to the plot (up to 12).

Datasets

Experimental data

Models and simulations

Adachi 1989: n,k 0.207–12.4 µm n,k 0.2066–12.4 µm

Use it in Lightsmith

Load this data in Python, simulate in one more line

pip install lightsmith

import lightsmith as ls

# GaP (Gallium phosphide): Aspnes and Studna 1983: n,k 0.21–0.83 µm
gap = ls.fetch_refractiveindex("main", "GaP", "Aspnes", ref="c5c2f188e848453def5970e347399d653df2ffc2")
print(gap.range_nm)  # (206.6, 826.6) nm
eps = gap.eps([633])  # complex permittivity

Downloads the original record once (pinned to the imported snapshot) and caches it.

import json, urllib.request
import lightsmith as ls

url = "https://materials.lightsmith.dev/v1/datasets/ds_4f4d984e4cd6/lightsmith"
gap = ls.Tabulated.model_validate(json.load(urllib.request.urlopen(url)))
print(gap.source)  # citation and provenance travel with the data

Any dataset here, as the library's Tabulated material (gap/aspnes-studna-1983).

# ... load gap as above, then:
sim = ls.Simulation(
    particles=[ls.Particle(shape=ls.Sphere(radius_nm=50), material=gap)],
    medium_index=1.0,
    wavelengths=ls.WavelengthRange(start_nm=400, stop_nm=826, num=81),
)
res = ls.solve(sim)  # exact Mie for a sphere
print(res.q_ext)     # extinction efficiency at each wavelength

Same spec runs with DDA, FDTD, BEM or T-matrix: ls.compare(sim, ["mie", "dda"]).

Materials guide Open a sphere of it in Studio Quick start Ask the community

Lightsmith is open source (MIT): Mie, T-matrix, BEM, DDA, FDTD, RCWA, TMM, mode solvers and inverse design behind one spec, on CPU or GPU. GitHub.

About GaP (Gallium phosphide)

Gallium phosphide (GaP) is a binary III-V semiconductor with a direct bandgap of 2.26 eV, making it useful in specific optoelectronic applications. It is commonly employed in red, orange, and green light-emitting diodes (LEDs). One of the notable advantages of GaP is its high thermal conductivity, which allows for better heat dissipation in electronic devices. While it does not exhibit the same level of efficiency as materials like GaAs in high-frequency applications, GaP is used as a substrate material for other III-V semiconductors, such as GaAs and InP, to form heterostructure devices. It also finds applications in photonic integrated circuits and is sometimes used in combination with other semiconductors to engineer desired electronic or optical properties.

Other names: Gallium phosphide, Gallium phosphide, GaP, Gallium(III) phosphide

API: /v1/materials/mat_3c2684f1effe · slug gap