GaSb (Gallium antimonide)

Semiconductors and photonic platforms

4 datasets, together covering 0.2066–12.4 µm. Default: Aspnes and Studna 1983: n,k 0.207–0.827 µm.

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Datasets

Experimental data

Models and simulations

Use it in Lightsmith

Load this data in Python, simulate in one more line

pip install lightsmith
import lightsmith as ls

# GaSb (Gallium antimonide): Aspnes and Studna 1983: n,k 0.207–0.827 µm
gasb = ls.fetch_refractiveindex("main", "GaSb", "Aspnes", ref="c5c2f188e848453def5970e347399d653df2ffc2")
print(gasb.range_nm)  # (206.6, 826.6) nm
eps = gasb.eps([633])  # complex permittivity

Downloads the original record once (pinned to the imported snapshot) and caches it.

Lightsmith is open source (MIT): Mie, T-matrix, BEM, DDA, FDTD, RCWA, TMM, mode solvers and inverse design behind one spec, on CPU or GPU. GitHub.

About GaSb (Gallium antimonide)

Gallium antimonide (GaSb) is a III-V compound semiconductor with a direct band gap of approximately 0.72 eV. It is well-suited for infrared (IR) applications, particularly in the mid- to long-wavelength IR range. Due to its narrow band gap, GaSb is often employed in optoelectronic devices like photodetectors, laser diodes, and infrared-emitting diodes. It also serves as a substrate for other III-V semiconductors like InAs and InSb, facilitating the creation of complex heterostructures with tailored electronic and optical properties. Gallium antimonide is known for its high electron mobility, making it appealing for high-speed electronic applications as well. Overall, GaSb is a versatile material with growing significance in advanced optoelectronic and electronic technologies.

Other names: Gallium antimonide

Also listed in

API: /v1/materials/mat_c1b34fe1ce61 · slug gasb