InAs (Indium arsenide)

Semiconductors and photonic platforms

3 datasets, together covering 0.2066–31.3 µm. Default: Aspnes and Studna 1983: n,k 0.21–0.83 µm.

Compare datasets

Tick datasets in the list to add them to the plot (up to 12).

Datasets

Experimental data

Models and simulations

Adachi 1989: n,k 0.207–12.4 µm n,k 0.2066–12.4 µm

Use it in Lightsmith

Load this data in Python, simulate in one more line

pip install lightsmith

import lightsmith as ls

# InAs (Indium arsenide): Aspnes and Studna 1983: n,k 0.21–0.83 µm
inas = ls.fetch_refractiveindex("main", "InAs", "Aspnes", ref="c5c2f188e848453def5970e347399d653df2ffc2")
print(inas.range_nm)  # (206.6, 826.6) nm
eps = inas.eps([633])  # complex permittivity

Downloads the original record once (pinned to the imported snapshot) and caches it.

import json, urllib.request
import lightsmith as ls

url = "https://materials.lightsmith.dev/v1/datasets/ds_3a8834bb1791/lightsmith"
inas = ls.Tabulated.model_validate(json.load(urllib.request.urlopen(url)))
print(inas.source)  # citation and provenance travel with the data

Any dataset here, as the library's Tabulated material (inas/aspnes-studna-1983).

# ... load inas as above, then:
sim = ls.Simulation(
    particles=[ls.Particle(shape=ls.Sphere(radius_nm=50), material=inas)],
    medium_index=1.0,
    wavelengths=ls.WavelengthRange(start_nm=400, stop_nm=826, num=81),
)
res = ls.solve(sim)  # exact Mie for a sphere
print(res.q_ext)     # extinction efficiency at each wavelength

Same spec runs with DDA, FDTD, BEM or T-matrix: ls.compare(sim, ["mie", "dda"]).

Materials guide Open a sphere of it in Studio Quick start Ask the community

Lightsmith is open source (MIT): Mie, T-matrix, BEM, DDA, FDTD, RCWA, TMM, mode solvers and inverse design behind one spec, on CPU or GPU. GitHub.

About InAs (Indium arsenide)

Indium arsenide (InAs) is a compound semiconductor material that belongs to the III-V group of semiconductors. It is known for its high electron mobility and narrow energy band gap, making it particularly useful in high-speed electronics and optoelectronics. InAs is a key material in the manufacture of infrared detectors, including those used for night-vision systems, and is also used in the fabrication of quantum dot structures. The material can be grown via techniques such as molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD), and is often used in conjunction with other III-V semiconductor materials like GaAs or InP to form heterostructures or quantum wells. It has applications in photodetectors, high-frequency transistors, and other optoelectronic devices. Care should be exercised when working with InAs due to the toxicity of arsenic.

Other names: Indium arsenide, Indium(III) arsenide

API: /v1/materials/mat_05a2a63e039d · slug inas