InP (Indium phosphide)

Semiconductors and photonic platforms integrated-photonics

4 datasets, together covering 0.2066–30 µm. Default: Aspnes and Studna 1983: n,k 0.21–0.83 µm.

Compare datasets

Tick datasets in the list to add them to the plot (up to 12).

Datasets

Experimental data

Models and simulations

Adachi 1989: n,k 0.207–12.4 µm n,k 0.2066–12.4 µm

Use it in Lightsmith

Load this data in Python, simulate in one more line

pip install lightsmith

import lightsmith as ls

# InP (Indium phosphide): Aspnes and Studna 1983: n,k 0.21–0.83 µm
inp = ls.fetch_refractiveindex("main", "InP", "Aspnes", ref="c5c2f188e848453def5970e347399d653df2ffc2")
print(inp.range_nm)  # (206.6, 826.6) nm
eps = inp.eps([633])  # complex permittivity

Downloads the original record once (pinned to the imported snapshot) and caches it.

import json, urllib.request
import lightsmith as ls

url = "https://materials.lightsmith.dev/v1/datasets/ds_0d84c19d265b/lightsmith"
inp = ls.Tabulated.model_validate(json.load(urllib.request.urlopen(url)))
print(inp.source)  # citation and provenance travel with the data

Any dataset here, as the library's Tabulated material (inp/aspnes-studna-1983).

# ... load inp as above, then:
sim = ls.Simulation(
    particles=[ls.Particle(shape=ls.Sphere(radius_nm=50), material=inp)],
    medium_index=1.0,
    wavelengths=ls.WavelengthRange(start_nm=400, stop_nm=826, num=81),
)
res = ls.solve(sim)  # exact Mie for a sphere
print(res.q_ext)     # extinction efficiency at each wavelength

Same spec runs with DDA, FDTD, BEM or T-matrix: ls.compare(sim, ["mie", "dda"]).

Materials guide Open a sphere of it in Studio Quick start Ask the community

Lightsmith is open source (MIT): Mie, T-matrix, BEM, DDA, FDTD, RCWA, TMM, mode solvers and inverse design behind one spec, on CPU or GPU. GitHub.

About InP (Indium phosphide)

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus, belonging to the III-V group of semiconductors. It offers a high electron mobility and a direct bandgap, making it especially useful for optoelectronic devices that operate in the infrared and visible spectra. InP is widely used as a substrate material for epitaxial growth of other III-V semiconductors, such as GaAs and InGaAs, and is essential for constructing high-speed transistors and photonic integrated circuits. The material is often grown using molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD). InP is particularly important in the fabrication of high-performance light-emitting diodes (LEDs), laser diodes, and waveguide-based photonic components. It's also a key material for fiber-optic communication systems. Handling InP requires caution due to the toxicity of its constituent elements.

Other names: Indium phosphide, Indium(III) phosphide, indium phosphide

API: /v1/materials/mat_54aea1dc7108 · slug inp