InSb (Indium antimonide)

Semiconductors and photonic platforms

3 datasets, together covering 0.2066–12.4 µm. Default: Aspnes and Studna 1983: n,k 0.207–0.827 µm.

Compare datasets

Tick datasets in the list to add them to the plot (up to 12).

Datasets

Experimental data

Aspnes and Studna 1983: n,k 0.207–0.827 µm n,k 0.2066–0.8266 µm default

Models and simulations

Use it in Lightsmith

Load this data in Python, simulate in one more line

pip install lightsmith

import lightsmith as ls

# InSb (Indium antimonide): Aspnes and Studna 1983: n,k 0.207–0.827 µm
insb = ls.fetch_refractiveindex("main", "InSb", "Aspnes", ref="c5c2f188e848453def5970e347399d653df2ffc2")
print(insb.range_nm)  # (206.6, 826.6) nm
eps = insb.eps([633])  # complex permittivity

Downloads the original record once (pinned to the imported snapshot) and caches it.

import json, urllib.request
import lightsmith as ls

url = "https://materials.lightsmith.dev/v1/datasets/ds_b6d610044aa8/lightsmith"
insb = ls.Tabulated.model_validate(json.load(urllib.request.urlopen(url)))
print(insb.source)  # citation and provenance travel with the data

Any dataset here, as the library's Tabulated material (insb/aspnes-studna-1983).

# ... load insb as above, then:
sim = ls.Simulation(
    particles=[ls.Particle(shape=ls.Sphere(radius_nm=50), material=insb)],
    medium_index=1.0,
    wavelengths=ls.WavelengthRange(start_nm=400, stop_nm=826, num=81),
)
res = ls.solve(sim)  # exact Mie for a sphere
print(res.q_ext)     # extinction efficiency at each wavelength

Same spec runs with DDA, FDTD, BEM or T-matrix: ls.compare(sim, ["mie", "dda"]).

Materials guide Open a sphere of it in Studio Quick start Ask the community

Lightsmith is open source (MIT): Mie, T-matrix, BEM, DDA, FDTD, RCWA, TMM, mode solvers and inverse design behind one spec, on CPU or GPU. GitHub.

About InSb (Indium antimonide)

Indium antimonide (InSb) is a III-V compound semiconductor with a zinc blende crystal structure. It possesses a very narrow energy band gap and high electron mobility, which make it particularly useful in infrared detectors and infrared astronomy applications. The material is highly sensitive to temperature variations, a factor that must be accounted for in device design and operation. In addition to its utility in photodetectors, it is employed in Hall effect devices due to its excellent mobility properties. Its high electron mobility also makes it suitable for high-frequency and high-performance transistors. Indium antimonide wafers are typically grown using liquid phase epitaxy (LPE) or molecular beam epitaxy (MBE), and device fabrication often utilizes metal-organic chemical vapor deposition (MOCVD). Like many semiconductor materials, InSb must be handled carefully due to toxicity concerns.

Other names: Indium antimonide

API: /v1/materials/mat_7761a4aff1f6 · slug insb