GaAs (Gallium arsenide)
Semiconductors and photonic platforms integrated-photonics
13 datasets, together covering 0.2066–399.6 µm. Default: Aspnes et al. 1986: n,k 0.207–0.827 µm.
Compare datasets
Tick datasets in the list to add them to the plot (up to 12).
Datasets
Experimental data
- Aspnes et al. 1986: n,k 0.207–0.827 µm
- Franta et al. 2026: n,k 0.895–400 µm; 300 K
- Franta et al. 2026: n,k 0.922–400 µm; 370 K
- Franta et al. 2026: n,k 0.952–400 µm; 440 K
- Gadras et al. 2025: n,k 0.450–1.40 µm; 600 °C
- Perner et al. 2023: n 2.0–7.1 µm
- Papatryfonos et al. 2021: n,k 0.260–1.88 µm
- Skauli et al. 2003: n 0.97–17 µm
- Jellison 1992: n,k 0.234–0.840 µm
- Kachare et al. 1976: n 1.4–11 µm
Models and simulations
Use it in Lightsmith
Load this data in Python, simulate in one more line
pip install lightsmith
import lightsmith as ls
# GaAs (Gallium arsenide): Aspnes et al. 1986: n,k 0.207–0.827 µm
gaas = ls.fetch_refractiveindex("main", "GaAs", "Aspnes", ref="c5c2f188e848453def5970e347399d653df2ffc2")
print(gaas.range_nm) # (206.6, 826.6) nm
eps = gaas.eps([633]) # complex permittivityDownloads the original record once (pinned to the imported snapshot) and caches it.
import json, urllib.request
import lightsmith as ls
url = "https://materials.lightsmith.dev/v1/datasets/ds_bef64bb60754/lightsmith"
gaas = ls.Tabulated.model_validate(json.load(urllib.request.urlopen(url)))
print(gaas.source) # citation and provenance travel with the dataAny dataset here, as the library's Tabulated material (gaas/aspnes-1986).
# ... load gaas as above, then:
sim = ls.Simulation(
particles=[ls.Particle(shape=ls.Sphere(radius_nm=50), material=gaas)],
medium_index=1.0,
wavelengths=ls.WavelengthRange(start_nm=400, stop_nm=826, num=81),
)
res = ls.solve(sim) # exact Mie for a sphere
print(res.q_ext) # extinction efficiency at each wavelengthSame spec runs with DDA, FDTD, BEM or T-matrix: ls.compare(sim, ["mie", "dda"]).
Lightsmith is open source (MIT): Mie, T-matrix, BEM, DDA, FDTD, RCWA, TMM, mode solvers and inverse design behind one spec, on CPU or GPU. GitHub.
About GaAs (Gallium arsenide)
Gallium arsenide (GaAs) is a compound semiconductor material that holds a prominent position in the world of optoelectronics and high-frequency electronics. With a direct bandgap of approximately 1.43 eV, GaAs is highly efficient for radiation recombination, making it ideal for a range of applications such as solar cells, lasers, and light-emitting diodes (LEDs). It offers superior electron mobility compared to silicon, which allows for faster electronic devices and is widely used in applications requiring high-frequency operation like in microwave and millimeter-wave technologies. GaAs is commonly grown using methods such as molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD). While it's more costly to produce than silicon, the material's superior electronic and optoelectronic properties often justify the additional expense in specialized applications.
Other names: Gallium arsenide, Gallium(III) arsenide, gallium arsenide
API: /v1/materials/mat_e3f30b6c34f0 · slug gaas