Optical constants

Refractive index of GaP-InP (Gallium indium phosphide, GaInP)

Ferrini et al. 2002: n,k 0.225–0.653 µm

Data
tabulated nk
Range
0.2254–0.6525 µm
Points
37
State
gas
Licence
CC0-1.0

Plot

Click the plot to set the calculator wavelength.

At one wavelength

Range 0.2254–0.6525 µm
Refractive index n
3.64687
Extinction coefficient k
0.167552
Permittivity ε1
13.2716
Permittivity ε2
1.22208
Absorption coefficient α
35832.6 cm⁻¹
Penetration depth δ = λ/(2πk)
558.151 nm
Abbe number Vd
—
Chromatic dispersion dn/dλ
-1.3806 µm⁻¹
Group index ng
4.4581
Group velocity dispersion
— fs²/mm
Dispersion parameter D
— ps/(nm·km)
Photon energy
2.11001 eV

ε = (n + ik)², α = 4πk/λ, ng = n − λ dn/dλ, GVD = λ³/(2πc²) d²n/dλ², D = −(λ/c) d²n/dλ². Group-velocity dispersion is given for formula data only.

Use it in Lightsmith

Load this data in Python, simulate in one more line

pip install lightsmith
import lightsmith as ls

# GaP-InP (Gallium indium phosphide, GaInP): Ferrini et al. 2002: n,k 0.225–0.653 µm
gap_inp = ls.fetch_refractiveindex("other", "GaP-InP", "Ferrini-UV-VIS", ref="c5c2f188e848453def5970e347399d653df2ffc2")
print(gap_inp.range_nm)  # (225.4, 652.5) nm
eps = gap_inp.eps([633])  # complex permittivity

Downloads the original record once (pinned to the imported snapshot) and caches it.

Lightsmith is open source (MIT): Mie, T-matrix, BEM, DDA, FDTD, RCWA, TMM, mode solvers and inverse design behind one spec, on CPU or GPU. GitHub.

Comments and conditions

Ga0.51In0.49P. Undoped lattice matched film grown lattice matched on GaAs substrates, by metal-organic vapour phase epitaxy (MOVPE) at 700 °C.

Conditions

substrate
GaAs
film thickness
3.15e-6

References

R. Ferrini, G. Guizzetti, M. Patrini, A. Parisini, L. Tarricone, B. Valenti. Optical functions of InGaP/GaAs epitaxial layers from 0.01 to 5.5 eV. Eur. Phys. J. B 84, 449-458 (2002)
  • doi:10.1140/epjb/e2002-00177-x Optical functions of InGaP/GaAs epitaxial layers from 0.01 to 5.5 eV, The European Physical Journal B - Condensed Matter (2002)

Cite

R. Ferrini et al.. Optical functions of InGaP/GaAs epitaxial layers from 0.01 to 5.5 eV. The European Physical Journal B - Condensed Matter, 27, 449-458 (2002), doi:10.1140/epjb/e2002-00177-x; Data from the refractiveindex.info database (M. N. Polyanskiy, Sci. Data 11, 94 (2024), doi:10.1038/s41597-023-02898-2)

Data

37 rows as published
GaP-InP (Gallium indium phosphide, GaInP), Ferrini et al. 2002: n,k 0.225–0.653 µm: n and k versus wavelength
λ (µm)nk
0.22541.9433.236
0.22962.0093.317
0.23392.0983.439
0.23842.2553.604
0.24312.5283.765
0.2482.9143.834
0.2533.3523.755
0.25833.7413.493
0.26383.9813.126
0.26954.0612.753
0.27554.0272.451
0.28183.9452.241
0.28833.8612.105
0.29523.7952.017
0.30243.751.959
0.313.7221.922
0.31793.7131.901
0.32633.7231.898
0.33513.761.91
0.34443.8361.938
0.35423.9821.98
0.36474.2631.964
0.37574.5741.716
0.38754.6771.26
0.39994.6040.863
0.41334.4160.639
0.42754.2440.518
0.44284.1070.442
0.45923.9990.391
0.47693.9180.351
0.49593.8530.306
0.51663.7880.261
0.53913.7270.228
0.56363.680.198
0.59043.6430.164
0.61993.6120.123
0.65253.5880.077

Optical transmission calculator

Free-standing sample in vacuum, normal incidence
Method
Transmittance T
—
Reflectance R
—

Fresnel reflection calculator

Direction
Rp
—
Rs
—
R = (Rp+Rs)/2
—
Phase φp
—
Phase φs
—
Brewster angle θB
—
Critical angle θC
—