AlN (Aluminium nitride)

Semiconductors and photonic platforms integrated-photonicsanisotropic

5 datasets, together covering 0.2114–20.02 µm. Default: Pastrňák and Roskovcová 1966: n(o) 0.22–5 µm.

Compare datasets

Tick datasets in the list to add them to the plot (up to 12).

Datasets

Bulk stoichiometric AlN

Non-stoichiometric AlN films

Use it in Lightsmith

Load this data in Python, simulate in one more line

pip install lightsmith

import lightsmith as ls

# AlN (Aluminium nitride): Pastrňák and Roskovcová 1966: n(o) 0.22–5 µm
aln = ls.fetch_refractiveindex("main", "AlN", "Pastrnak-o", ref="c5c2f188e848453def5970e347399d653df2ffc2")
print(aln.range_nm)  # (220, 5000) nm
eps = aln.eps([633])  # complex permittivity

Downloads the original record once (pinned to the imported snapshot) and caches it.

import json, urllib.request
import lightsmith as ls

url = "https://materials.lightsmith.dev/v1/datasets/ds_31ce7156d39e/lightsmith"
aln = ls.Tabulated.model_validate(json.load(urllib.request.urlopen(url)))
print(aln.source)  # citation and provenance travel with the data

Any dataset here, as the library's Tabulated material (aln/pastrnak-roskovcova-1966-o).

# ... load aln as above, then:
sim = ls.Simulation(
    particles=[ls.Particle(shape=ls.Sphere(radius_nm=50), material=aln)],
    medium_index=1.0,
    wavelengths=ls.WavelengthRange(start_nm=400, stop_nm=1000, num=81),
)
res = ls.solve(sim)  # exact Mie for a sphere
print(res.q_ext)     # extinction efficiency at each wavelength

Same spec runs with DDA, FDTD, BEM or T-matrix: ls.compare(sim, ["mie", "dda"]).

import json, urllib.request
import lightsmith as ls

url = "https://materials.lightsmith.dev/v1/datasets/ds_31ce7156d39e/lightsmith?model=drude_lorentz"
aln_dl = ls.DrudeLorentz.model_validate(json.load(urllib.request.urlopen(url)))

A dispersive Drude–Lorentz model for time-domain solvers.

Materials guide Open a sphere of it in Studio Quick start Ask the community

Lightsmith is open source (MIT): Mie, T-matrix, BEM, DDA, FDTD, RCWA, TMM, mode solvers and inverse design behind one spec, on CPU or GPU. GitHub.

About AlN (Aluminium nitride)

AlN, or aluminum nitride, is a wide-bandgap semiconductor material that crystallizes in a wurtzite or hexagonal structure. With a bandgap of approximately 6.1 eV, AlN has excellent thermal and electrical insulation properties. One of the most significant attributes of AlN is its high thermal conductivity, which makes it an ideal material for electronic packaging and thermal management applications. In the optical domain, AlN is transparent in the ultraviolet and visible range, and its high refractive index makes it a candidate for optoelectronic devices like light-emitting diodes (LEDs) and laser diodes, especially those operating in the ultraviolet spectrum. It also serves as a substrate for the growth of other wide-bandgap materials, facilitating the development of high-power and high-frequency electronic devices. AlN is often used in heterostructures, combining with other III-V or II-VI materials to achieve specific electronic or optical functionalities. Despite its advantages, the material poses challenges in terms of high-quality crystal growth and doping efficiency, which are active areas of ongoing research. Overall, AlN remains a critical material in the semiconductor industry, offering a unique combination of thermal, electrical, and optical properties that are leveraged in a wide array of applications.

Other names: Aluminium nitride

API: /v1/materials/mat_2d44c105c8fa · slug aln