GaN (Gallium nitride)

Semiconductors and photonic platforms integrated-photonicsanisotropic

5 datasets, together covering 0.124–10 µm. Default: Barker and Ilegems 1973: n(o) 0.35–10 µm.

Compare datasets

Tick datasets in the list to add them to the plot (up to 12).

Datasets

Experimental data

Models and simulations

Kawashima et al. 1997: thin film; n,k 0.124–0.992 µm n,k 0.124–0.9919 µm

Use it in Lightsmith

Load this data in Python, simulate in one more line

pip install lightsmith

import lightsmith as ls

# GaN (Gallium nitride): Barker and Ilegems 1973: n(o) 0.35–10 µm
gan = ls.fetch_refractiveindex("main", "GaN", "Barker-o", ref="c5c2f188e848453def5970e347399d653df2ffc2")
print(gan.range_nm)  # (350, 10000) nm
eps = gan.eps([633])  # complex permittivity

Downloads the original record once (pinned to the imported snapshot) and caches it.

import json, urllib.request
import lightsmith as ls

url = "https://materials.lightsmith.dev/v1/datasets/ds_60a8c81e2cba/lightsmith"
gan = ls.Tabulated.model_validate(json.load(urllib.request.urlopen(url)))
print(gan.source)  # citation and provenance travel with the data

Any dataset here, as the library's Tabulated material (gan/barker-ilegems-1973-o).

# ... load gan as above, then:
sim = ls.Simulation(
    particles=[ls.Particle(shape=ls.Sphere(radius_nm=50), material=gan)],
    medium_index=1.0,
    wavelengths=ls.WavelengthRange(start_nm=400, stop_nm=1000, num=81),
)
res = ls.solve(sim)  # exact Mie for a sphere
print(res.q_ext)     # extinction efficiency at each wavelength

Same spec runs with DDA, FDTD, BEM or T-matrix: ls.compare(sim, ["mie", "dda"]).

import json, urllib.request
import lightsmith as ls

url = "https://materials.lightsmith.dev/v1/datasets/ds_60a8c81e2cba/lightsmith?model=drude_lorentz"
gan_dl = ls.DrudeLorentz.model_validate(json.load(urllib.request.urlopen(url)))

A dispersive Drude–Lorentz model for time-domain solvers.

Materials guide Open a sphere of it in Studio Quick start Ask the community

Lightsmith is open source (MIT): Mie, T-matrix, BEM, DDA, FDTD, RCWA, TMM, mode solvers and inverse design behind one spec, on CPU or GPU. GitHub.

About GaN (Gallium nitride)

Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in light-emitting diodes (LEDs) for both general lighting and displays. With a wide bandgap of about 3.4 eV, GaN is also highly valued for its thermal stability, which makes it particularly useful in high-power and high-frequency applications. It is an essential material in the fabrication of high-electron-mobility transistors (HEMTs) and is increasingly used in high-frequency and high-power radar and communication systems. GaN has gained prominence in optoelectronics, specifically in the development of blue LEDs, which led to energy-efficient white LEDs and was recognized with the 2014 Nobel Prize in Physics. It is often grown on substrates like sapphire or silicon carbide, although the industry is moving towards native GaN substrates for higher performance.

Other names: Gallium nitride, Gallium(III) nitride

API: /v1/materials/mat_da8c458134b2 · slug gan